Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors
نویسندگان
چکیده
The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30-65 nm and 5 μm in length) ZnO-based metal-semiconductor-metal photoconductor device in order to study the origin of persistent photoconductivity. The current-voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state.
منابع مشابه
Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires
Photoconductivity is studied in individual ZnO nanowires. Under ultraviolet (UV) illumination, the induced photocurrents are observed to persist both in air and in vacuum. Their dependence on UV intensity in air is explained by means of photoinduced surface depletion depth decrease caused by oxygen desorption induced by photogenerated holes. The observed photoresponse is much greater in vacuum ...
متن کاملReduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector
We report a ZnO-based thin film transistor UV photodetector with a back gate configuration. The thin-film transistor (TFT) aspect ratio W/L is 150 lm/5 lm and has a current on-off ratio of 10. The detector shows UV-visible rejection ratio of 10 and cut-off wavelength of 376 nm. The device has low dark current of 5 10 14 A. The persistent photoconductivity is suppressed through oxygen plasma tre...
متن کاملA ZnO nanowire-based photo-inverter with pulse-induced fast recovery.
We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of ph...
متن کاملLight-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity
The persistent photoconductivity (PPC) in ZnO has been a critical problem in opto-electrical devices employing ZnO such as ultraviolet sensors and thin film transistors for the transparent display. While the metastable state of oxygen vacancy (VO) is widely accepted as the microscopic origin of PPC, recent experiments on the influence of temperature and oxygen environments are at variance with ...
متن کاملConductive Photo-Activated Porphyrin-ZnO Nanostructured Gas Sensor Array
Chemoresistors working at room temperature are attractive for low-consumption integrated sensors. Previous studies show that this feature can be obtained with photoconductive porphyrins-coated ZnO nanostructures. Furthermore, variations of the porphyrin molecular structure alter both the chemical sensitivity and the photoconductivity, and can be used to define the sensor characteristics. Based ...
متن کامل